LUMS EE Faculty Publishes in IEEE Journal

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LUMS EE Faculty Publishes in IEEE Journal

March 14, 2012

An article by Dr. Hassan Abbas Khan, Department of Electrical Engineering, LUMS School of Science and Engineering has been published in the IEEE Journal of Quantum Electronics, which is one of the top journals in generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter. The article is titled “Detailed Analysis on the Spectral Response of InP/InGaAs HPTs for Optoelectronic Applications".

The article discusses an analytical model for spectral response of heterojunction phototransistors (HPTs) in order to understand the behavior of lattice-matched InP/InGaAs HPTs with changing device and material parameters. According to the findings, the modeled spectral response at incident wavelength radiations of 980, 1310, and 1550 nm lead to a good agreement with experimental results.

Dr. Khan further shared, "We performed several simulations in order to determine the individual influences of several parameters, such as the base-layer thickness and the surface-recombination velocity on the responsivity of the device. A decreasing trend for the surface-recombination parameter with increasing wavelengths was observed, and this is attributed to the greater recombination rate for high-energy photons generated near the surface."

Dr. Khan has done his MSc in Communication Engineering (with distinction) and PhD in Electrical and Electronic Engineering from the University of Manchester, UK. His doctorate thesis was based on optical characterisation GaAs- and InP- based devices for optoelectronic applications.