Faculty Profile
Dr. Nauman Zafar Butt
Assistant Professor
Department of Electrical Engineering
Nauman Z. Butt did his Ph.D. in Electrical Engineering from Purdue University in 2008 and B.S. in the same field from University of Engineering & Technology, Lahore in 2002. From 2008 to 2012, he was a member of technical staff in Semiconductor Research & Development Center (SRDC) in IBM Microelectronics Division, Hopewell Junction, NY.
Dr. Butt’s research interests include investigating physics and technology of microelectronic and optoelectronic devices through theory, compact modeling, simulations and experiments. His Ph.D. thesis was on computational study of scaling and radiation damage in nanoscale memory devices. In IBM, he has been involved in the development of embedded DRAM and dense SRAM devices in 32nm and 14nm SOI technology.
| Title | Publication | Author | Year |
|---|---|---|---|
| Investigation of optimal tilt angles and effects of soiling on PV energy production in Pakistan | Renewable Energy | Ullah A., Imran H., Maqsood Z., Butt N.Z. | 2019 |
| Computational modeling of polycrystalline silicon on oxide passivating contact for silicon solar cells | IEEE Transactions on Electron Devices | Younas R., Imran H., Shah S.I.H., Abdolkader T.M., Butt N.Z. | 2019 |
| Modeling of TiO |
IEEE Transactions on Electron Devices | Ullah H., Imran H., Butt N.Z. | 2018 |
| High-Performance Bifacial Perovskite/Silicon Double-Tandem Solar Cell | IEEE Journal of Photovoltaics | Imran H., Durrani I., Kamran M., Abdolkader T.M., Faryad M., Butt N.Z. | 2018 |
| Design of high performance Graphene/Silicon photodetectors | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | Iqbal S., Imran H., Qasim U.B., Butt N.Z. | 2017 |
| Computational modeling of hybrid graphene/quantum dot photodetectors | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | 2017 | |
| Investigation of dominant hysteresis phenomenon in perovskite solar cell | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 | Imran H., Butt N.Z. | 2017 |
| Investigation of dominant hysteresis phenomenon in perovskite solar cell | Conference Record of the IEEE Photovoltaic Specialists Conference | Imran H., Butt N.Z. | 2016 |
| Role of Carrier Mobility and Band Alignment Engineering on the Efficiency of Colloidal Quantum Dot Solar Cells | IEEE Journal of Photovoltaics | Saad R., Butt N.Z. | 2016 |
| Carrier-Selective NiO/Si and TiO |
IEEE Transactions on Electron Devices | Imran H., Abdolkader T.M., Butt N.Z. | 2016 |
| Substrate-Induced Photofield Effect in Graphene Phototransistors | IEEE Transactions on Electron Devices | Butt N.Z., Sarker B.K., Chen Y.P., Alam M.A. | 2015 |
| Computational study of hybrid nanomaterial/insulator/silicon solar cells | IEEE Transactions on Electron Devices | 2015 | |
| The role of substrate in the photoresponse of graphene transistors | Device Research Conference - Conference Digest, DRC | Imran H., Sarker B.K., Chen Y.P., Alam M.A., Butt N.Z. | 2015 |
| Dark current suppression in quantum dot solar cells through interfacial engineering | 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 | Butt N.Z., Sarwar A., Sadiq M.M., Mazher K.U. | 2014 |
| Modeling and analysis of transistor mismatch due to variability in short-channel effect induced by random dopant fluctuation | IEEE Electron Device Letters | Butt N.Z., Johnson J.B. | 2012 |
| A 0.039um2 high performance eDRAM cell based on 32nm high-K/metal SOI technology | Technical Digest - International Electron Devices Meeting, IEDM | Butt N., Mcstay K., Cestero A., Ho H., Kong W., Fang S., Krishnan R., Khan B., Tessier A., Davies W., Lee S., Zhang Y., Johnson J., Rombawa S., Takalkar R., Blauberg A., Hawkins K.V., Liu J., Rosenblatt S., Goyal P., Gupta S., Ervin J., Li Z., Galis S., Barth J., Yin M., Weaver T., Li J.H., Narasimha S., Parries P., Henson W.K., Robson N., Kirihata T., Chudzik M., Maciejewski E., Agnello P., Stiffler S., Iyer S.S. | 2010 |
| Scaling deep trench based eDRAM on SOI to 32nm and beyond | Technical Digest - International Electron Devices Meeting, IEDM | Wang G., Anand D., Butt N., Cestero A., Chudzik M., Ervin J., Fang S., Freeman G., Ho H., Khan B., Kim B., Kong W., Krishnan R., Krishnan S., Kwon O., Liu J., McStay K., Nelson E., Nummy K., Parries P., Sim J., Takalkar R., Tessier A., Todi R.M., Malik R., Stiffler S., Iyer S.S. | 2009 |
| Modeling single event upsets in floating gate memory cells | IEEE International Reliability Physics Symposium Proceedings | Butt N.Z., Alam M. | 2008 |
| Soft error trends and new physical model for ionizing dose effects in double gate Z-RAM cell | IEEE Transactions on Nuclear Science | Butt N.Z., Yoder P.D., Alam M.A. | 2007 |
| Scaling limits of double-gate and surround-gate Z-RAM cells | IEEE Transactions on Electron Devices | 2007 | |
| Low-frequency noise statistics for the breakdown characterization of ultrathin gate oxides | Applied Physics Letters | 2006 | |
| Scaling limits of capacitorless double gate DRAM cell | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | Butt N., Alam M.A. | 2006 |