Faculty Profile

Dr. Nauman Zafar Butt

Assistant Professor

Department of Electrical Engineering

Nauman Z. Butt did his Ph.D. in Electrical Engineering from Purdue University in 2008 and B.S. in the same field from University of Engineering & Technology, Lahore in 2002. From 2008 to 2012, he was a member of technical staff in Semiconductor Research & Development Center (SRDC) in IBM Microelectronics Division, Hopewell Junction, NY.

Dr. Butt’s research interests include investigating physics and technology of microelectronic and optoelectronic devices through theory, compact modeling, simulations and experiments. His Ph.D. thesis was on computational study of scaling and radiation damage in nanoscale memory devices. In IBM, he has been involved in the development of embedded DRAM and dense SRAM devices in 32nm and 14nm SOI technology.

Computational modeling of hybrid graphene/quantum dot photodetectorsInternational Conference on Simulation of Semiconductor Processes and Devices, SISPADImran H., Iqbal S., Farooq A., Butt N.Z.2017
Design of high performance Graphene/Silicon photodetectorsInternational Conference on Simulation of Semiconductor Processes and Devices, SISPADIqbal S., Imran H., Qasim U.B., Butt N.Z.2017
Investigation of dominant hysteresis phenomenon in perovskite solar cellConference Record of the IEEE Photovoltaic Specialists ConferenceImran H., Butt N.Z.2016
Role of Carrier Mobility and Band Alignment Engineering on the Efficiency of Colloidal Quantum Dot Solar CellsIEEE Journal of PhotovoltaicsSaad R., Butt N.Z.2016
Carrier-Selective NiO/Si and TiO2/Si Contacts for Silicon Heterojunction Solar CellsIEEE Transactions on Electron DevicesImran H., Abdolkader T.M., Butt N.Z.2016
Substrate-Induced Photofield Effect in Graphene PhototransistorsIEEE Transactions on Electron DevicesButt N.Z., Sarker B.K., Chen Y.P., Alam M.A.2015
Computational study of hybrid nanomaterial/insulator/silicon solar cellsIEEE Transactions on Electron DevicesImran H., Butt N.Z.2015
The role of substrate in the photoresponse of graphene transistorsDevice Research Conference - Conference Digest, DRCImran H., Sarker B.K., Chen Y.P., Alam M.A., Butt N.Z.2015
Dark current suppression in quantum dot solar cells through interfacial engineering2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014Butt N.Z., Sarwar A., Sadiq M.M., Mazher K.U.2014
Modeling and analysis of transistor mismatch due to variability in short-channel effect induced by random dopant fluctuationIEEE Electron Device LettersButt N.Z., Johnson J.B.2012
A 0.039um2high performance eDRAM cell based on 32nm high-K/metal SOI technologyTechnical Digest - International Electron Devices Meeting, IEDMButt N., Mcstay K., Cestero A., Ho H., Kong W., Fang S., Krishnan R., Khan B., Tessier A., Davies W., Lee S., Zhang Y., Johnson J., Rombawa S., Takalkar R., Blauberg A., Hawkins K.V., Liu J., Rosenblatt S., Goyal P., Gupta S., Ervin J., Li Z., Galis S., Barth J., Yin M., Weaver T., Li J.H., Narasimha S., Parries P., Henson W.K., Robson N., Kirihata T., Chudzik M., Maciejewski E., Agnello P., Stiffler S., Iyer S.S.2010
Scaling deep trench based eDRAM on SOI to 32nm and beyondTechnical Digest - International Electron Devices Meeting, IEDMWang G., Anand D., Butt N., Cestero A., Chudzik M., Ervin J., Fang S., Freeman G., Ho H., Khan B., Kim B., Kong W., Krishnan R., Krishnan S., Kwon O., Liu J., McStay K., Nelson E., Nummy K., Parries P., Sim J., Takalkar R., Tessier A., Todi R.M., Malik R., Stiffler S., Iyer S.S.2009
Modeling single event upsets in floating gate memory cellsIEEE International Reliability Physics Symposium ProceedingsButt N.Z., Alam M.2008
Scaling limits of capacitorless double gate DRAM cellInternational Conference on Simulation of Semiconductor Processes and Devices, SISPADButt N., Alam M.A.2007
Soft error trends and new physical model for ionizing dose effects in double gate Z-RAM cellIEEE Transactions on Nuclear ScienceButt N.Z., Yoder P.D., Alam M.A.2007
Scaling limits of double-gate and surround-gate Z-RAM cellsIEEE Transactions on Electron DevicesButt N.Z., Alam M.A.2007
Low-frequency noise statistics for the breakdown characterization of ultrathin gate oxidesApplied Physics LettersButt N.Z., Chang A.M., Raza H., Bashir R., Liu J., Kwong D.L.2006